Influence of the Substrate, Process Conditions, and Postannealing Temperature on the Properties of ZnO Thin Films Grown by the Successive Ionic Layer Adsorption and Reaction Method

Here, we report the effect of substrate, sonication process, and postannealing on structural, morphological, optical properties ZnO thin films grown in presence isopropyl alcohol (IPA) at temperature 30–65 °C by successive ionic layer adsorption reaction (SILAR) method both soda lime glass (SLG) Cu foil. The X-ray diffraction (XRD) patterns confirmed preferential growth along (002) (101) planes wurtzite structure when deposited SLG foil substrates, respectively. Both XRD Raman spectra Cu-oxide phases films. scanning electron microscopy image shows compact uniformly distributed grains for samples without while using IPA temperatures 50 65 °C. treatment improves crystallinity films, further evident transmission reflection results. estimated band gaps are range 3.37–3.48 eV as-grown samples. Our experimental results revealed that high-quality could be an dispersant °C, which is much lower than reported SILAR method. This study suggests IPA, substrate better c-axis-oriented deionized water, ethylene glycol, propylene glycol optimum Air annealing foils induced formation CuxO/ZnO junctions, from characteristic I–V curve including structural data.